product datasheet september 7, 2007 1 triquint semiconductor texas: phone (972)994-8465 fa x (972)994-8504 info-mmw@tqs.com www.triquint.com rev - 0 5 10 15 20 25 30 35 0246810121416 frequency (ghz) maximum gain (db) mag msg dc - 20 ghz discrete power phemt TGF2022-12 key features and performance ? frequency range: dc - 20 ghz ? > 31 dbm nominal psat ? 58% maximum pae ? 39 dbm nominal oip3 ? 13 db nominal power gain ? suitable for high re liability applications ? 1.2mm x 0.35 m power phemt ? nominal bias vd = 8-12v, idq = 90-150ma (u nder rf drive, id rises from 90ma to 300ma) ? chip dimensions: 0.57 x 0. 79 x 0.10 mm (0.022 x 0.031 x 0.004 in) primary applications ? point-to-point radio ? high-reliability space ? military ? base stations ? broadband wireless applications product description the triquint tgf202 2-12 is a discrete 1.2 mm phemt which operates from dc-20 ghz. the TGF2022-12 is designed using triquint?s proven standard 0.35um power phemt production process. the TGF2022-12 typically provides > 31 dbm of saturated output power with power gain of 13 db. the maximum power added efficiency is 58% which makes the tgf2022-1 2 appropriate for high efficiency applications. the TGF2022-12 is also ideally suited for point-to-point radi o, high-reliability space, and militar y applications. the TGF2022-12 has a protective surface passivation layer providing environmental robustness. lead-free and rohs compliant
product datasheet september 7, 2007 2 triquint semiconductor texas: phone (972)994-8465 fa x (972)994-8504 info-mmw@tqs.com www.triquint.com rev - table i maximum ratings symbol parameter 1/ value notes v + positive supply voltage 12.5 v 2/ v - negative supply voltage range -5v to 0v i + positive supply current 564 ma 2/ | i g | gate supply current 14 ma p in input continuous wave power 26 dbm 2/ p d power dissipation see note 3 2/ 3 / t ch operating channel temperature 150 c 4/ t m mounting temperature (30 seconds) 320 c t stg storage temperature -65 to 150 c 1/ these ratings represent the maximum operable values for this device. 2/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3/ for a median life time of 1e+6 hrs, power dissipation is limited to: p d (max) = (150 c ? tbase c) / 69.0 ( c/w) 4/ junction operating temperature will directly affect the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. TGF2022-12 table ii dc probe characteristics (t a = 25 c, nominal) symbol parameter minimum typical maximum unit idss saturated drain current - 360 - ma gm transconductance - 450 - ms v p pinch-off voltage -1.5 -1 -0.5 v v bgs breakdown voltage gate-source -30 - -8 v v bgd breakdown voltage gate-drain -30 - -14 v note: for triquint?s 0.35um power phemt devices, rf breakdown >> dc breakdown
product datasheet september 7, 2007 3 triquint semiconductor texas: phone (972)994-8465 fa x (972)994-8504 info-mmw@tqs.com www.triquint.com rev - table iii rf characterization table 1/ (t a = 25 c, nominal) symbol parameter f = 10 ghz f = 18 ghz units vd = 10v idq = 90 ma vd = 12v idq = 90 ma vd = 10v idq = 90 ma vd = 12v idq = 90 ma power tuned: psat pae gain l 2/ saturated output power power added efficiency power gain load reflection coefficient 31.9 52.4 12.9 0.579 154 32.6 51.9 12.9 0.558 145.3 31.1 41.5 8.3 0.696 155.4 31.7 37.0 8.0 0.718 153.2 dbm % db - efficiency tuned: psat pae gain l 2/ saturated output power power added efficiency power gain load reflection coefficient 31.3 58.3 13 0.57 137.5 32.3 56.0 13 0.576 136.6 30.5 46.0 8.5 0.759 153.3 31.1 42.5 8.3 0.791 151.3 dbm % db - oip3 output toi 40 39 40 39 dbm TGF2022-12 1/ values in this table are from measurements tak en from a 0.6mm unit phemt cell at 10 and 18 ghz 2/ optimum load impedance for maximum power or maximum pae at 10 and 18 ghz table iv thermal information parameter test conditions t ch ( o c) jc ( c/w) t m (hrs) jc thermal resistance (channel to backside of carrier) vd = 12 v idq = 90 ma pdiss = 1.08 w 145 69 1.6 e+6 note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 c baseplate temperature.
product datasheet september 7, 2007 4 triquint semiconductor texas: phone (972)994-8465 fa x (972)994-8504 info-mmw@tqs.com www.triquint.com rev - rgs cgs i r - + lg rg rdg cdg l s r s source source gate drain rd ld v i gmvi rds cds l out TGF2022-12 linear model for 0. 6 mm unit phemt cell upc = 0.6mm unit phemt cell gate source source drain upc unit phemt cell reference plane model parameter vd = 8v idq = 45ma vd = 8v idq = 60ma vd = 8v idq = 75ma vd = 10v idq = 45ma vd = 10v idq = 60ma vd = 12v idq = 45ma units rg 0.22 0.23 0.24 0.23 0.24 0.24 rs 0.40 0.41 0.41 0.46 0.45 0.50 rd 0.51 0.52 0.52 0.50 0.50 0.48 gm 0.195 0.202 0.202 0.188 0.195 0.183 s cgs 1.50 1.63 1.70 1.64 1.73 1.71 pf ri 1.65 1.59 1.58 1.72 1.64 1.73 cds 0.115 0.115 0.116 0.114 0.115 0.114 pf rds 243.14 247.08 255.12 278.72 279.31 302.49 cgd 0.072 0.066 0.063 0.064 0.061 0.060 pf tau 5.94 6.23 6.51 6.85 6.95 7.36 ps ls 0.001 0.001 0.001 0.001 0.001 0.001 nh lg 0.108 0.108 0.108 0.108 0.108 0.108 nh ld 0.121 0.120 0.118 0.118 0.118 0.117 nh rgs 5110 5140 8310 5110 5420 5120 rgd 57700 64800 74400 79400 82900 82300
product datasheet september 7, 2007 5 triquint semiconductor texas: phone (972)994-8465 fa x (972)994-8504 info-mmw@tqs.com www.triquint.com rev - TGF2022-12 linear model for 1.2mm phemt l - via = 0.0135 nh (3x) upc upc 1 4 3 gate pads (2x) drain pads (2x) 2
product datasheet september 7, 2007 6 triquint semiconductor texas: phone (972)994-8465 fa x (972)994-8504 info-mmw@tqs.com www.triquint.com rev - TGF2022-12 unmatched s-paramete rs for 1.2 mm phemt bias conditions: vd = 12v, idq = 90ma note: the s-parameters are calculated by connecting nodes 1-2 together, and nodes 3-4 together to form a 2-port network. frequency s11 s11 ang s21 s21 ang s12 s12 ang s22 s22 ang (ghz) db deg db deg db deg db deg 0.5 -0.449 -74.97 25.960 139.64 -32.579 51.44 -7.225 -40.59 1 -0.566 -114.01 22.665 117.83 -29.857 31.56 -9.792 -62.45 1.5 -0.616 -133.49 19.905 105.89 -29.100 21.51 -11.461 -74.20 2 -0.638 -144.62 17.702 98.10 -28.810 15.62 -12.337 -81.55 2.5 -0.648 -151.74 15.902 92.30 -28.680 11.71 -12.687 -86.71 3 -0.654 -156.68 14.390 87.57 -28.620 8.88 -12.706 -90.67 3.5 -0.657 -160.33 13.087 83.49 -28.595 6.69 -12.526 -93.91 4 -0.658 -163.15 11.945 79.82 -28.592 4.91 -12.225 -96.68 4.5 -0.658 -165.41 10.926 76.44 -28.603 3.43 -11.858 -99.15 5 -0.658 -167.26 10.008 73.26 -28.624 2.15 -11.454 -101.40 5.5 -0.657 -168.83 9.170 70.24 -28.652 1.03 -11.036 -103.51 6 -0.655 -170.17 8.400 67.34 -28.687 0.03 -10.615 -105.49 6.5 -0.654 -171.35 7.687 64.53 -28.728 -0.87 -10.200 -107.39 7 -0.652 -172.39 7.022 61.80 -28.773 -1.69 -9.795 -109.22 7.5 -0.650 -173.32 6.398 59.14 -28.822 -2.44 -9.403 -110.99 8 -0.647 -174.17 5.811 56.53 -28.875 -3.13 -9.025 -112.72 8.5 -0.645 -174.94 5.256 53.97 -28.931 -3.76 -8.663 -114.40 9 -0.642 -175.66 4.729 51.46 -28.991 -4.35 -8.316 -116.05 9.5 -0.639 -176.32 4.227 48.99 -29.053 -4.89 -7.985 -117.66 10 -0.636 -176.94 3.747 46.56 -29.118 -5.38 -7.669 -119.25 10.5 -0.633 -177.53 3.288 44.16 -29.185 -5.84 -7.367 -120.81 11 -0.630 -178.08 2.847 41.79 -29.255 -6.26 -7.079 -122.34 11.5 -0.627 -178.61 2.423 39.45 -29.326 -6.65 -6.805 -123.84 12 -0.624 -179.11 2.014 37.14 -29.400 -7.00 -6.543 -125.33 12.5 -0.621 -179.60 1.619 34.86 -29.475 -7.31 -6.293 -126.79 13 -0.618 179.94 1.237 32.61 -29.551 -7.59 -6.055 -128.23 13.5 -0.614 179.49 0.867 30.38 -29.628 -7.85 -5.828 -129.65 14 -0.611 179.05 0.508 28.17 -29.707 -8.06 -5.611 -131.04 14.5 -0.608 178.63 0.160 25.99 -29.786 -8.25 -5.404 -132.42 15 -0.604 178.22 -0.180 23.83 -29.866 -8.41 -5.206 -133.78 15.5 -0.601 177.82 -0.510 21.70 -29.947 -8.54 -5.017 -135.12 16 -0.598 177.43 -0.831 19.59 -30.028 -8.64 -4.836 -136.44 16.5 -0.594 177.05 -1.145 17.49 -30.108 -8.71 -4.663 -137.75 17 -0.591 176.68 -1.452 15.42 -30.189 -8.75 -4.497 -139.03 17.5 -0.588 176.31 -1.751 13.37 -30.270 -8.76 -4.339 -140.30 18 -0.584 175.95 -2.044 11.34 -30.350 -8.75 -4.187 -141.55 18.5 -0.581 175.60 -2.330 9.33 -30.430 -8.71 -4.041 -142.79 19 -0.578 175.25 -2.611 7.33 -30.509 -8.65 -3.901 -144.01 19.5 -0.575 174.90 -2.886 5.36 -30.588 -8.56 -3.768 -145.21 20 -0.572 174.56 -3.156 3.40 -30.665 -8.44 -3.639 -146.40 20.5 -0.569 174.23 -3.421 1.46 -30.741 -8.30 -3.516 -147.57 21 -0.566 173.90 -3.681 -0.47 -30.816 -8.14 -3.397 -148.72 21.5 -0.563 173.57 -3.936 -2.38 -30.889 -7.95 -3.283 -149.87 22 -0.560 173.24 -4.187 -4.27 -30.961 -7.75 -3.174 -150.99 22.5 -0.557 172.92 -4.434 -6.15 -31.031 -7.52 -3.068 -152.11 23 -0.554 172.60 -4.677 -8.01 -31.099 -7.26 -2.967 -153.21 23.5 -0.551 172.29 -4.917 -9.86 -31.166 -6.99 -2.869 -154.30 24 -0.548 171.98 -5.153 -11.70 -31.230 -6.70 -2.775 -155.37 24.5 -0.545 171.67 -5.385 -13.52 -31.292 -6.40 -2.685 -156.43 25 -0.542 171.36 -5.614 -15.33 -31.352 -6.07 -2.597 -157.48 25.5 -0.540 171.05 -5.841 -17.12 -31.410 -5.73 -2.513 -158.51 26 -0.537 170.75 -6.064 -18.91 -31.465 -5.37 -2.432 -159.54
product datasheet september 7, 2007 7 triquint semiconductor texas: phone (972)994-8465 fa x (972)994-8504 info-mmw@tqs.com www.triquint.com rev - gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handing, assembly and test. mechanical drawing TGF2022-12 ne 0.000 [0.000] 0.785 [0.031] 0.000 [0.000] 0.565 [0.022] 0.296 [0.012] 0.488 [0.019] 0.119 [0.005] 0.445 [0.018] 1 2 4 3 drain gate units: millimeters (inches) thickness: 0.100 (0.004) chip edge to bond pad dimensions are shown to center of bond pad chip size tolerance: +/- 0.051 (0.002) gnd is backside of mmic bond pads #1-2: (gate) 0.090 x 0.090 (0.004 x 0.004) bond pads #3-4: (drain) 0.090 x 0.090 (0.004 x 0.004)
product datasheet september 7, 2007 8 triquint semiconductor texas: phone (972)994-8465 fa x (972)994-8504 info-mmw@tqs.com www.triquint.com rev - TGF2022-12 reflow process assembly notes: ? use ausn (80/20) solder with limited exposure to temperatures at or above 300 c for 30 sec ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? no fluxes should be utilized. ? coefficient of thermal expansion matching is critical for long-term reliability. ? devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment can be used in low-power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. ? microwave or radiant curing should not be used because of differential heating. ? coefficient of thermal expansion matching is critical. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? devices with small pad sizes should be bonded with 0.0007-inch wire. ? maximum stage temperature is 200 c. assembly process notes
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